Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the differe...

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Detalles Bibliográficos
Autores principales: Soti, G., Wauters, F., Breitenfeldt, M., Finlay, P., Kraev, I.S., Knecht, A., Porobic, T., Zákoucký, D., Severijns, N.
Lenguaje:eng
Publicado: 2013
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2013.06.047
http://cds.cern.ch/record/1556627
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author Soti, G.
Wauters, F.
Breitenfeldt, M.
Finlay, P.
Kraev, I.S.
Knecht, A.
Porobic, T.
Zákoucký, D.
Severijns, N.
author_facet Soti, G.
Wauters, F.
Breitenfeldt, M.
Finlay, P.
Kraev, I.S.
Knecht, A.
Porobic, T.
Zákoucký, D.
Severijns, N.
author_sort Soti, G.
collection CERN
description Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to \beta{} particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.
id cern-1556627
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2013
record_format invenio
spelling cern-15566272021-05-03T20:00:42Zdoi:10.1016/j.nima.2013.06.047http://cds.cern.ch/record/1556627engSoti, G.Wauters, F.Breitenfeldt, M.Finlay, P.Kraev, I.S.Knecht, A.Porobic, T.Zákoucký, D.Severijns, N.Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeVDetectors and Experimental TechniquesGeant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to \beta{} particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.arXiv:1306.4538oai:cds.cern.ch:15566272013-06-19
spellingShingle Detectors and Experimental Techniques
Soti, G.
Wauters, F.
Breitenfeldt, M.
Finlay, P.
Kraev, I.S.
Knecht, A.
Porobic, T.
Zákoucký, D.
Severijns, N.
Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
title Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
title_full Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
title_fullStr Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
title_full_unstemmed Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
title_short Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
title_sort performance of geant4 in simulating semiconductor particle detector response in the energy range below 1 mev
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2013.06.047
http://cds.cern.ch/record/1556627
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