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Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the differe...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2013.06.047 http://cds.cern.ch/record/1556627 |