Cargando…

High permittivity gate dielectric materials

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, me...

Descripción completa

Detalles Bibliográficos
Autor principal: Kar, Samares
Lenguaje:eng
Publicado: Springer 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-642-36535-5
http://cds.cern.ch/record/1559224
_version_ 1780930607314894848
author Kar, Samares
author_facet Kar, Samares
author_sort Kar, Samares
collection CERN
description "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
id cern-1559224
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2013
publisher Springer
record_format invenio
spelling cern-15592242021-04-21T22:35:59Zdoi:10.1007/978-3-642-36535-5http://cds.cern.ch/record/1559224engKar, SamaresHigh permittivity gate dielectric materialsEngineering"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."Springeroai:cds.cern.ch:15592242013
spellingShingle Engineering
Kar, Samares
High permittivity gate dielectric materials
title High permittivity gate dielectric materials
title_full High permittivity gate dielectric materials
title_fullStr High permittivity gate dielectric materials
title_full_unstemmed High permittivity gate dielectric materials
title_short High permittivity gate dielectric materials
title_sort high permittivity gate dielectric materials
topic Engineering
url https://dx.doi.org/10.1007/978-3-642-36535-5
http://cds.cern.ch/record/1559224
work_keys_str_mv AT karsamares highpermittivitygatedielectricmaterials