Depletion zone calculation of MAPS detectors using TCAD simulations

The volume of the depleted region of the collecting diode plays a vital role in the charge collection when an ionization particle traverses the Monolithic Active Pixel Sensor (MAPS) detector. Thus the volume of the depletion region should be large enough to collect majority electron-hole pairs gener...

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Autor principal: Khan, Hira
Lenguaje:eng
Publicado: 2013
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/1594980
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author Khan, Hira
author_facet Khan, Hira
author_sort Khan, Hira
collection CERN
description The volume of the depleted region of the collecting diode plays a vital role in the charge collection when an ionization particle traverses the Monolithic Active Pixel Sensor (MAPS) detector. Thus the volume of the depletion region should be large enough to collect majority electron-hole pairs generated by the ionization particle otherwise they will diffuse and eventually will take longer time for them to be collected. This report is about simulating a collecting diode (sector 4) with increased resistivity, in TCAD. After that comparing the results with the results of a low resistive collecting diode.
id cern-1594980
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2013
record_format invenio
spelling cern-15949802019-09-30T06:29:59Zhttp://cds.cern.ch/record/1594980engKhan, HiraDepletion zone calculation of MAPS detectors using TCAD simulationsDetectors and Experimental TechniquesThe volume of the depleted region of the collecting diode plays a vital role in the charge collection when an ionization particle traverses the Monolithic Active Pixel Sensor (MAPS) detector. Thus the volume of the depletion region should be large enough to collect majority electron-hole pairs generated by the ionization particle otherwise they will diffuse and eventually will take longer time for them to be collected. This report is about simulating a collecting diode (sector 4) with increased resistivity, in TCAD. After that comparing the results with the results of a low resistive collecting diode.CERN-STUDENTS-Note-2013-091oai:cds.cern.ch:15949802013-08-23
spellingShingle Detectors and Experimental Techniques
Khan, Hira
Depletion zone calculation of MAPS detectors using TCAD simulations
title Depletion zone calculation of MAPS detectors using TCAD simulations
title_full Depletion zone calculation of MAPS detectors using TCAD simulations
title_fullStr Depletion zone calculation of MAPS detectors using TCAD simulations
title_full_unstemmed Depletion zone calculation of MAPS detectors using TCAD simulations
title_short Depletion zone calculation of MAPS detectors using TCAD simulations
title_sort depletion zone calculation of maps detectors using tcad simulations
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/1594980
work_keys_str_mv AT khanhira depletionzonecalculationofmapsdetectorsusingtcadsimulations

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