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III-nitride semiconductors and their modern devices
This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial ac...
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Lenguaje: | eng |
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Oxford University Press
2013
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Acceso en línea: | https://dx.doi.org/10.1093/acprof:oso/9780199681723.001.0001 http://cds.cern.ch/record/1609571 |
_version_ | 1780931965418995712 |
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author | Gil, Bernard |
author_facet | Gil, Bernard |
author_sort | Gil, Bernard |
collection | CERN |
description | This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers. |
id | cern-1609571 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2013 |
publisher | Oxford University Press |
record_format | invenio |
spelling | cern-16095712021-04-21T22:15:57Zdoi:10.1093/acprof:oso/9780199681723.001.0001http://cds.cern.ch/record/1609571engGil, BernardIII-nitride semiconductors and their modern devicesEngineeringThis book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.Oxford University Pressoai:cds.cern.ch:16095712013 |
spellingShingle | Engineering Gil, Bernard III-nitride semiconductors and their modern devices |
title | III-nitride semiconductors and their modern devices |
title_full | III-nitride semiconductors and their modern devices |
title_fullStr | III-nitride semiconductors and their modern devices |
title_full_unstemmed | III-nitride semiconductors and their modern devices |
title_short | III-nitride semiconductors and their modern devices |
title_sort | iii-nitride semiconductors and their modern devices |
topic | Engineering |
url | https://dx.doi.org/10.1093/acprof:oso/9780199681723.001.0001 http://cds.cern.ch/record/1609571 |
work_keys_str_mv | AT gilbernard iiinitridesemiconductorsandtheirmoderndevices |