Cargando…

III-nitride semiconductors and their modern devices

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial ac...

Descripción completa

Detalles Bibliográficos
Autor principal: Gil, Bernard
Lenguaje:eng
Publicado: Oxford University Press 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1093/acprof:oso/9780199681723.001.0001
http://cds.cern.ch/record/1609571
_version_ 1780931965418995712
author Gil, Bernard
author_facet Gil, Bernard
author_sort Gil, Bernard
collection CERN
description This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
id cern-1609571
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2013
publisher Oxford University Press
record_format invenio
spelling cern-16095712021-04-21T22:15:57Zdoi:10.1093/acprof:oso/9780199681723.001.0001http://cds.cern.ch/record/1609571engGil, BernardIII-nitride semiconductors and their modern devicesEngineeringThis book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.Oxford University Pressoai:cds.cern.ch:16095712013
spellingShingle Engineering
Gil, Bernard
III-nitride semiconductors and their modern devices
title III-nitride semiconductors and their modern devices
title_full III-nitride semiconductors and their modern devices
title_fullStr III-nitride semiconductors and their modern devices
title_full_unstemmed III-nitride semiconductors and their modern devices
title_short III-nitride semiconductors and their modern devices
title_sort iii-nitride semiconductors and their modern devices
topic Engineering
url https://dx.doi.org/10.1093/acprof:oso/9780199681723.001.0001
http://cds.cern.ch/record/1609571
work_keys_str_mv AT gilbernard iiinitridesemiconductorsandtheirmoderndevices