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Technology of gallium nitride crystal growth
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-th...
Autores principales: | , , |
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Lenguaje: | eng |
Publicado: |
Springer
2010
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-3-642-04830-2 http://cds.cern.ch/record/1612830 |
_version_ | 1780932253109452800 |
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author | Ehrentraut, Dirk Meissner, Elke Bockowski, Michal |
author_facet | Ehrentraut, Dirk Meissner, Elke Bockowski, Michal |
author_sort | Ehrentraut, Dirk |
collection | CERN |
description | This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. |
id | cern-1612830 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2010 |
publisher | Springer |
record_format | invenio |
spelling | cern-16128302021-04-21T22:11:38Zdoi:10.1007/978-3-642-04830-2http://cds.cern.ch/record/1612830engEhrentraut, DirkMeissner, ElkeBockowski, MichalTechnology of gallium nitride crystal growthEngineeringThis book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.Springeroai:cds.cern.ch:16128302010 |
spellingShingle | Engineering Ehrentraut, Dirk Meissner, Elke Bockowski, Michal Technology of gallium nitride crystal growth |
title | Technology of gallium nitride crystal growth |
title_full | Technology of gallium nitride crystal growth |
title_fullStr | Technology of gallium nitride crystal growth |
title_full_unstemmed | Technology of gallium nitride crystal growth |
title_short | Technology of gallium nitride crystal growth |
title_sort | technology of gallium nitride crystal growth |
topic | Engineering |
url | https://dx.doi.org/10.1007/978-3-642-04830-2 http://cds.cern.ch/record/1612830 |
work_keys_str_mv | AT ehrentrautdirk technologyofgalliumnitridecrystalgrowth AT meissnerelke technologyofgalliumnitridecrystalgrowth AT bockowskimichal technologyofgalliumnitridecrystalgrowth |