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Silicon carbide, v.2: power devices and sensors

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devi...

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Detalles Bibliográficos
Autores principales: Friedrichs, Peter, Kimoto, Tsunenobu, Ley, Lothar, Pensl, Gerhard
Lenguaje:eng
Publicado: Wiley 2011
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/1613445
Descripción
Sumario:Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like elect