Silicon carbide, v.2: power devices and sensors

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devi...

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Detalles Bibliográficos
Autores principales: Friedrichs, Peter, Kimoto, Tsunenobu, Ley, Lothar, Pensl, Gerhard
Lenguaje:eng
Publicado: Wiley 2011
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/1613445
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author Friedrichs, Peter
Kimoto, Tsunenobu
Ley, Lothar
Pensl, Gerhard
author_facet Friedrichs, Peter
Kimoto, Tsunenobu
Ley, Lothar
Pensl, Gerhard
author_sort Friedrichs, Peter
collection CERN
description Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like elect
id cern-1613445
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
publisher Wiley
record_format invenio
spelling cern-16134452019-09-30T06:29:59Zhttp://cds.cern.ch/record/1613445engFriedrichs, PeterKimoto, TsunenobuLey, LotharPensl, GerhardSilicon carbide, v.2: power devices and sensorsXXSilicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electWileyoai:cds.cern.ch:16134452011
spellingShingle XX
Friedrichs, Peter
Kimoto, Tsunenobu
Ley, Lothar
Pensl, Gerhard
Silicon carbide, v.2: power devices and sensors
title Silicon carbide, v.2: power devices and sensors
title_full Silicon carbide, v.2: power devices and sensors
title_fullStr Silicon carbide, v.2: power devices and sensors
title_full_unstemmed Silicon carbide, v.2: power devices and sensors
title_short Silicon carbide, v.2: power devices and sensors
title_sort silicon carbide, v.2: power devices and sensors
topic XX
url http://cds.cern.ch/record/1613445
work_keys_str_mv AT friedrichspeter siliconcarbidev2powerdevicesandsensors
AT kimototsunenobu siliconcarbidev2powerdevicesandsensors
AT leylothar siliconcarbidev2powerdevicesandsensors
AT penslgerhard siliconcarbidev2powerdevicesandsensors

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