Cargando…

Phase change memory

As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technolo...

Descripción completa

Detalles Bibliográficos
Autor principal: Qureshi, Moinuddin K
Lenguaje:eng
Publicado: Morgan & Claypool Publishers 2011
Materias:
Acceso en línea:http://cds.cern.ch/record/1614208
Descripción
Sumario:As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t