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Phase change memory
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technolo...
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Lenguaje: | eng |
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Morgan & Claypool Publishers
2011
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Acceso en línea: | http://cds.cern.ch/record/1614208 |
_version_ | 1780932342554034176 |
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author | Qureshi, Moinuddin K |
author_facet | Qureshi, Moinuddin K |
author_sort | Qureshi, Moinuddin K |
collection | CERN |
description | As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t |
id | cern-1614208 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2011 |
publisher | Morgan & Claypool Publishers |
record_format | invenio |
spelling | cern-16142082021-04-21T22:10:19Zhttp://cds.cern.ch/record/1614208engQureshi, Moinuddin KPhase change memoryEngineeringAs conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions tMorgan & Claypool Publishersoai:cds.cern.ch:16142082011 |
spellingShingle | Engineering Qureshi, Moinuddin K Phase change memory |
title | Phase change memory |
title_full | Phase change memory |
title_fullStr | Phase change memory |
title_full_unstemmed | Phase change memory |
title_short | Phase change memory |
title_sort | phase change memory |
topic | Engineering |
url | http://cds.cern.ch/record/1614208 |
work_keys_str_mv | AT qureshimoinuddink phasechangememory |