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Phase change memory

As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technolo...

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Detalles Bibliográficos
Autor principal: Qureshi, Moinuddin K
Lenguaje:eng
Publicado: Morgan & Claypool Publishers 2011
Materias:
Acceso en línea:http://cds.cern.ch/record/1614208
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author Qureshi, Moinuddin K
author_facet Qureshi, Moinuddin K
author_sort Qureshi, Moinuddin K
collection CERN
description As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t
id cern-1614208
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
publisher Morgan & Claypool Publishers
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spelling cern-16142082021-04-21T22:10:19Zhttp://cds.cern.ch/record/1614208engQureshi, Moinuddin KPhase change memoryEngineeringAs conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions tMorgan & Claypool Publishersoai:cds.cern.ch:16142082011
spellingShingle Engineering
Qureshi, Moinuddin K
Phase change memory
title Phase change memory
title_full Phase change memory
title_fullStr Phase change memory
title_full_unstemmed Phase change memory
title_short Phase change memory
title_sort phase change memory
topic Engineering
url http://cds.cern.ch/record/1614208
work_keys_str_mv AT qureshimoinuddink phasechangememory