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High-k gate dielectrics for CMOS technology

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conve...

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Detalles Bibliográficos
Autores principales: He, Gang, Sun, Zhaoqi
Lenguaje:eng
Publicado: Wiley 2012
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/1615789
Descripción
Sumario:A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting dev