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High-k gate dielectrics for CMOS technology
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conve...
Autores principales: | , |
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Lenguaje: | eng |
Publicado: |
Wiley
2012
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1615789 |
_version_ | 1780932642109128704 |
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author | He, Gang Sun, Zhaoqi |
author_facet | He, Gang Sun, Zhaoqi |
author_sort | He, Gang |
collection | CERN |
description | A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting dev |
id | cern-1615789 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2012 |
publisher | Wiley |
record_format | invenio |
spelling | cern-16157892019-09-30T06:29:59Zhttp://cds.cern.ch/record/1615789engHe, GangSun, ZhaoqiHigh-k gate dielectrics for CMOS technologyXXA state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devWileyoai:cds.cern.ch:16157892012 |
spellingShingle | XX He, Gang Sun, Zhaoqi High-k gate dielectrics for CMOS technology |
title | High-k gate dielectrics for CMOS technology |
title_full | High-k gate dielectrics for CMOS technology |
title_fullStr | High-k gate dielectrics for CMOS technology |
title_full_unstemmed | High-k gate dielectrics for CMOS technology |
title_short | High-k gate dielectrics for CMOS technology |
title_sort | high-k gate dielectrics for cmos technology |
topic | XX |
url | http://cds.cern.ch/record/1615789 |
work_keys_str_mv | AT hegang highkgatedielectricsforcmostechnology AT sunzhaoqi highkgatedielectricsforcmostechnology |