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High-k gate dielectrics for CMOS technology

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conve...

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Detalles Bibliográficos
Autores principales: He, Gang, Sun, Zhaoqi
Lenguaje:eng
Publicado: Wiley 2012
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/1615789
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author He, Gang
Sun, Zhaoqi
author_facet He, Gang
Sun, Zhaoqi
author_sort He, Gang
collection CERN
description A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting dev
id cern-1615789
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2012
publisher Wiley
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spelling cern-16157892019-09-30T06:29:59Zhttp://cds.cern.ch/record/1615789engHe, GangSun, ZhaoqiHigh-k gate dielectrics for CMOS technologyXXA state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devWileyoai:cds.cern.ch:16157892012
spellingShingle XX
He, Gang
Sun, Zhaoqi
High-k gate dielectrics for CMOS technology
title High-k gate dielectrics for CMOS technology
title_full High-k gate dielectrics for CMOS technology
title_fullStr High-k gate dielectrics for CMOS technology
title_full_unstemmed High-k gate dielectrics for CMOS technology
title_short High-k gate dielectrics for CMOS technology
title_sort high-k gate dielectrics for cmos technology
topic XX
url http://cds.cern.ch/record/1615789
work_keys_str_mv AT hegang highkgatedielectricsforcmostechnology
AT sunzhaoqi highkgatedielectricsforcmostechnology