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Technology computer aided design: simulation for VLSI MOSFET
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, e...
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Lenguaje: | eng |
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CRC Press
2013
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Acceso en línea: | http://cds.cern.ch/record/1619305 |
_version_ | 1780933005876920320 |
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author | Sarkar, Chandan Kumar |
author_facet | Sarkar, Chandan Kumar |
author_sort | Sarkar, Chandan Kumar |
collection | CERN |
description | Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and |
id | cern-1619305 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2013 |
publisher | CRC Press |
record_format | invenio |
spelling | cern-16193052020-07-16T20:02:25Zhttp://cds.cern.ch/record/1619305engSarkar, Chandan KumarTechnology computer aided design: simulation for VLSI MOSFETEngineeringResponding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and CRC Pressoai:cds.cern.ch:16193052013 |
spellingShingle | Engineering Sarkar, Chandan Kumar Technology computer aided design: simulation for VLSI MOSFET |
title | Technology computer aided design: simulation for VLSI MOSFET |
title_full | Technology computer aided design: simulation for VLSI MOSFET |
title_fullStr | Technology computer aided design: simulation for VLSI MOSFET |
title_full_unstemmed | Technology computer aided design: simulation for VLSI MOSFET |
title_short | Technology computer aided design: simulation for VLSI MOSFET |
title_sort | technology computer aided design: simulation for vlsi mosfet |
topic | Engineering |
url | http://cds.cern.ch/record/1619305 |
work_keys_str_mv | AT sarkarchandankumar technologycomputeraideddesignsimulationforvlsimosfet |