Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel det...

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Autores principales: Bomben, M., Bagolini, A., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2013
Materias:
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/9/05/C05020
http://cds.cern.ch/record/1626193
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author Bomben, M.
Bagolini, A.
Boscardin, M.
Bosisio, L.
Calderini, G.
Chauveau, J.
Giacomini, G.
La Rosa, A.
Marchori, G.
Zorzi, N.
author_facet Bomben, M.
Bagolini, A.
Boscardin, M.
Bosisio, L.
Calderini, G.
Chauveau, J.
Giacomini, G.
La Rosa, A.
Marchori, G.
Zorzi, N.
author_sort Bomben, M.
collection CERN
description In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.
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spelling cern-16261932023-03-14T20:56:44Z doi:10.1088/1748-0221/9/05/C05020 http://cds.cern.ch/record/1626193 eng Bomben, M. Bagolini, A. Boscardin, M. Bosisio, L. Calderini, G. Chauveau, J. Giacomini, G. La Rosa, A. Marchori, G. Zorzi, N. Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades Detectors and Experimental Techniques Detectors and Experimental Techniques 9: Advanced infrastructures for detector R&D 9.3: Precision Pixel Detectors In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given. In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLASexperiment plans to upgrade the Inner Detector with an all-silicon system. Because of itsradiation hardness and cost effectiveness, the n-on-p silicon technology is a promisingcandidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgelessplanar pixel sensors, making use of the active trench concept for the reduction of the deadarea at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a completeoverview of the electrical characterization of the produced devices will be given. In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1626193 JINST JINST, (2014) pp. C05020 2013-11-07
spellingShingle Detectors and Experimental Techniques
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
Bomben, M.
Bagolini, A.
Boscardin, M.
Bosisio, L.
Calderini, G.
Chauveau, J.
Giacomini, G.
La Rosa, A.
Marchori, G.
Zorzi, N.
Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
title Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
title_full Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
title_fullStr Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
title_full_unstemmed Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
title_short Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
title_sort electrical characterization of a thin edgeless n-on-p planar pixel sensors for atlas upgrades
topic Detectors and Experimental Techniques
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
url https://dx.doi.org/10.1088/1748-0221/9/05/C05020
http://cds.cern.ch/record/1626193
http://cds.cern.ch/record/1626193
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