Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel det...

Descripción completa

Detalles Bibliográficos
Autores principales: Bomben, M., Bagolini, A., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2013
Materias:
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/9/05/C05020
http://cds.cern.ch/record/1626193

Ejemplares similares

Ejemplares similares