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Semiconductors: preparation, crystal growth, and selected properties
| Autor principal: | |
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| Lenguaje: | eng |
| Publicado: |
Springer
1972
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/978-1-4684-6201-2 http://cds.cern.ch/record/1626565 |
| _version_ | 1780933791070552064 |
|---|---|
| author | Connolly, T |
| author_facet | Connolly, T |
| author_sort | Connolly, T |
| collection | CERN |
| id | cern-1626565 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1972 |
| publisher | Springer |
| record_format | invenio |
| spelling | cern-16265652021-04-21T21:39:28Zdoi:10.1007/978-1-4684-6201-2http://cds.cern.ch/record/1626565engConnolly, TSemiconductors: preparation, crystal growth, and selected propertiesGeneral Theoretical PhysicsSpringeroai:cds.cern.ch:16265651972 |
| spellingShingle | General Theoretical Physics Connolly, T Semiconductors: preparation, crystal growth, and selected properties |
| title | Semiconductors: preparation, crystal growth, and selected properties |
| title_full | Semiconductors: preparation, crystal growth, and selected properties |
| title_fullStr | Semiconductors: preparation, crystal growth, and selected properties |
| title_full_unstemmed | Semiconductors: preparation, crystal growth, and selected properties |
| title_short | Semiconductors: preparation, crystal growth, and selected properties |
| title_sort | semiconductors: preparation, crystal growth, and selected properties |
| topic | General Theoretical Physics |
| url | https://dx.doi.org/10.1007/978-1-4684-6201-2 http://cds.cern.ch/record/1626565 |
| work_keys_str_mv | AT connollyt semiconductorspreparationcrystalgrowthandselectedproperties |