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Nanowire field effect transistors principles and applications

“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essent...

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Detalles Bibliográficos
Autores principales: Kim, Dae, Jeong, Yoon-Ha
Lenguaje:eng
Publicado: Springer 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-1-4614-8124-9
http://cds.cern.ch/record/1627012
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author Kim, Dae
Jeong, Yoon-Ha
author_facet Kim, Dae
Jeong, Yoon-Ha
author_sort Kim, Dae
collection CERN
description “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
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spelling cern-16270122021-04-21T21:38:48Zdoi:10.1007/978-1-4614-8124-9http://cds.cern.ch/record/1627012engKim, DaeJeong, Yoon-HaNanowire field effect transistors principles and applicationsEngineering“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.Springeroai:cds.cern.ch:16270122014
spellingShingle Engineering
Kim, Dae
Jeong, Yoon-Ha
Nanowire field effect transistors principles and applications
title Nanowire field effect transistors principles and applications
title_full Nanowire field effect transistors principles and applications
title_fullStr Nanowire field effect transistors principles and applications
title_full_unstemmed Nanowire field effect transistors principles and applications
title_short Nanowire field effect transistors principles and applications
title_sort nanowire field effect transistors principles and applications
topic Engineering
url https://dx.doi.org/10.1007/978-1-4614-8124-9
http://cds.cern.ch/record/1627012
work_keys_str_mv AT kimdae nanowirefieldeffecttransistorsprinciplesandapplications
AT jeongyoonha nanowirefieldeffecttransistorsprinciplesandapplications