MOSFET technologies for double-pole four-throw radio-frequency switch

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as we...

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Detalles Bibliográficos
Autores principales: Srivastava, Viranjay M, Singh, Ghanshyam
Lenguaje:eng
Publicado: Springer 2014
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1007/978-3-319-01165-3
http://cds.cern.ch/record/1627049
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author Srivastava, Viranjay M
Singh, Ghanshyam
author_facet Srivastava, Viranjay M
Singh, Ghanshyam
author_sort Srivastava, Viranjay M
collection CERN
description This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
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spelling cern-16270492021-04-21T21:38:37Zdoi:10.1007/978-3-319-01165-3http://cds.cern.ch/record/1627049engSrivastava, Viranjay MSingh, GhanshyamMOSFET technologies for double-pole four-throw radio-frequency switchEngineeringThis book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches.Springeroai:cds.cern.ch:16270492014
spellingShingle Engineering
Srivastava, Viranjay M
Singh, Ghanshyam
MOSFET technologies for double-pole four-throw radio-frequency switch
title MOSFET technologies for double-pole four-throw radio-frequency switch
title_full MOSFET technologies for double-pole four-throw radio-frequency switch
title_fullStr MOSFET technologies for double-pole four-throw radio-frequency switch
title_full_unstemmed MOSFET technologies for double-pole four-throw radio-frequency switch
title_short MOSFET technologies for double-pole four-throw radio-frequency switch
title_sort mosfet technologies for double-pole four-throw radio-frequency switch
topic Engineering
url https://dx.doi.org/10.1007/978-3-319-01165-3
http://cds.cern.ch/record/1627049
work_keys_str_mv AT srivastavaviranjaym mosfettechnologiesfordoublepolefourthrowradiofrequencyswitch
AT singhghanshyam mosfettechnologiesfordoublepolefourthrowradiofrequencyswitch

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