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Silicon carbide: recent major advances

Detalles Bibliográficos
Autores principales: Choyke, W, Matsunami, H, Pensl, G
Lenguaje:eng
Publicado: Springer 2004
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-642-18870-1
http://cds.cern.ch/record/1627491
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author Choyke, W
Matsunami, H
Pensl, G
author_facet Choyke, W
Matsunami, H
Pensl, G
author_sort Choyke, W
collection CERN
id cern-1627491
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
publisher Springer
record_format invenio
spelling cern-16274912021-04-21T21:38:17Zdoi:10.1007/978-3-642-18870-1http://cds.cern.ch/record/1627491engChoyke, WMatsunami, HPensl, GSilicon carbide: recent major advancesEngineeringSpringeroai:cds.cern.ch:16274912004
spellingShingle Engineering
Choyke, W
Matsunami, H
Pensl, G
Silicon carbide: recent major advances
title Silicon carbide: recent major advances
title_full Silicon carbide: recent major advances
title_fullStr Silicon carbide: recent major advances
title_full_unstemmed Silicon carbide: recent major advances
title_short Silicon carbide: recent major advances
title_sort silicon carbide: recent major advances
topic Engineering
url https://dx.doi.org/10.1007/978-3-642-18870-1
http://cds.cern.ch/record/1627491
work_keys_str_mv AT choykew siliconcarbiderecentmajoradvances
AT matsunamih siliconcarbiderecentmajoradvances
AT penslg siliconcarbiderecentmajoradvances