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Heavily doped semiconductors

Detalles Bibliográficos
Autor principal: Fistul’, Victor I
Lenguaje:eng
Publicado: Springer 1995
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-1-4684-8821-0
http://cds.cern.ch/record/1627881
_version_ 1780933920519356416
author Fistul’, Victor I
author_facet Fistul’, Victor I
author_sort Fistul’, Victor I
collection CERN
id cern-1627881
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1995
publisher Springer
record_format invenio
spelling cern-16278812021-04-21T21:37:31Zdoi:10.1007/978-1-4684-8821-0http://cds.cern.ch/record/1627881engFistul’, Victor IHeavily doped semiconductorsGeneral Theoretical PhysicsSpringeroai:cds.cern.ch:16278811995
spellingShingle General Theoretical Physics
Fistul’, Victor I
Heavily doped semiconductors
title Heavily doped semiconductors
title_full Heavily doped semiconductors
title_fullStr Heavily doped semiconductors
title_full_unstemmed Heavily doped semiconductors
title_short Heavily doped semiconductors
title_sort heavily doped semiconductors
topic General Theoretical Physics
url https://dx.doi.org/10.1007/978-1-4684-8821-0
http://cds.cern.ch/record/1627881
work_keys_str_mv AT fistulvictori heavilydopedsemiconductors