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Heavily doped semiconductors
Autor principal: | |
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Lenguaje: | eng |
Publicado: |
Springer
1995
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-1-4684-8821-0 http://cds.cern.ch/record/1627881 |
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author | Fistul’, Victor I |
author_facet | Fistul’, Victor I |
author_sort | Fistul’, Victor I |
collection | CERN |
id | cern-1627881 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1995 |
publisher | Springer |
record_format | invenio |
spelling | cern-16278812021-04-21T21:37:31Zdoi:10.1007/978-1-4684-8821-0http://cds.cern.ch/record/1627881engFistul’, Victor IHeavily doped semiconductorsGeneral Theoretical PhysicsSpringeroai:cds.cern.ch:16278811995 |
spellingShingle | General Theoretical Physics Fistul’, Victor I Heavily doped semiconductors |
title | Heavily doped semiconductors |
title_full | Heavily doped semiconductors |
title_fullStr | Heavily doped semiconductors |
title_full_unstemmed | Heavily doped semiconductors |
title_short | Heavily doped semiconductors |
title_sort | heavily doped semiconductors |
topic | General Theoretical Physics |
url | https://dx.doi.org/10.1007/978-1-4684-8821-0 http://cds.cern.ch/record/1627881 |
work_keys_str_mv | AT fistulvictori heavilydopedsemiconductors |