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Dry etching for VLSI

Detalles Bibliográficos
Autores principales: Roosmalen, A J, Baggerman, J A G, Brader, S J H
Lenguaje:eng
Publicado: Springer 1991
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-1-4899-2566-4
http://cds.cern.ch/record/1627996
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author Roosmalen, A J
Baggerman, J A G
Brader, S J H
author_facet Roosmalen, A J
Baggerman, J A G
Brader, S J H
author_sort Roosmalen, A J
collection CERN
id cern-1627996
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1991
publisher Springer
record_format invenio
spelling cern-16279962021-04-21T21:36:54Zdoi:10.1007/978-1-4899-2566-4http://cds.cern.ch/record/1627996engRoosmalen, A JBaggerman, J A GBrader, S J HDry etching for VLSIParticle Physics – TheorySpringeroai:cds.cern.ch:16279961991
spellingShingle Particle Physics – Theory
Roosmalen, A J
Baggerman, J A G
Brader, S J H
Dry etching for VLSI
title Dry etching for VLSI
title_full Dry etching for VLSI
title_fullStr Dry etching for VLSI
title_full_unstemmed Dry etching for VLSI
title_short Dry etching for VLSI
title_sort dry etching for vlsi
topic Particle Physics – Theory
url https://dx.doi.org/10.1007/978-1-4899-2566-4
http://cds.cern.ch/record/1627996
work_keys_str_mv AT roosmalenaj dryetchingforvlsi
AT baggermanjag dryetchingforvlsi
AT bradersjh dryetchingforvlsi