Cargando…
Dry etching for VLSI
Autores principales: | , , |
---|---|
Lenguaje: | eng |
Publicado: |
Springer
1991
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-1-4899-2566-4 http://cds.cern.ch/record/1627996 |
_version_ | 1780933944598855680 |
---|---|
author | Roosmalen, A J Baggerman, J A G Brader, S J H |
author_facet | Roosmalen, A J Baggerman, J A G Brader, S J H |
author_sort | Roosmalen, A J |
collection | CERN |
id | cern-1627996 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1991 |
publisher | Springer |
record_format | invenio |
spelling | cern-16279962021-04-21T21:36:54Zdoi:10.1007/978-1-4899-2566-4http://cds.cern.ch/record/1627996engRoosmalen, A JBaggerman, J A GBrader, S J HDry etching for VLSIParticle Physics – TheorySpringeroai:cds.cern.ch:16279961991 |
spellingShingle | Particle Physics – Theory Roosmalen, A J Baggerman, J A G Brader, S J H Dry etching for VLSI |
title | Dry etching for VLSI |
title_full | Dry etching for VLSI |
title_fullStr | Dry etching for VLSI |
title_full_unstemmed | Dry etching for VLSI |
title_short | Dry etching for VLSI |
title_sort | dry etching for vlsi |
topic | Particle Physics – Theory |
url | https://dx.doi.org/10.1007/978-1-4899-2566-4 http://cds.cern.ch/record/1627996 |
work_keys_str_mv | AT roosmalenaj dryetchingforvlsi AT baggermanjag dryetchingforvlsi AT bradersjh dryetchingforvlsi |