Cargando…
Ferroelectric random access memories: fundamentals and applications
Autores principales: | Ishiwara, Hiroshi, Okuyama, Masanori, Arimoto, Yoshihiro |
---|---|
Lenguaje: | eng |
Publicado: |
Springer
2004
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/b12953 http://cds.cern.ch/record/1628126 |
Ejemplares similares
Cargando…
Conference on Fundamental Physics of Ferroelectrics
por: Krakauer, Henry
Publicado: (2001)
por: Krakauer, Henry
Publicado: (2001)
Ejemplares similares
-
Ferroelectric-gate field effect transistor memories: device physics and applications
por: Park, Byung-Eun, et al.
Publicado: (2016) -
Ferroelectric-gate field effect transistor memories: device physics and applications
por: Park, Byung-Eun, et al.
Publicado: (2020) -
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
por: Okuyama, Masanori, et al.
Publicado: (2005) -
Ferroelectricity: the fundamentals collection
por: Jimenez, Basilio, et al.
Publicado: (2008) -
Conference on Fundamental Physics of Ferroelectrics
por: Davies, Peter K, et al.
Publicado: (2003)