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Gate dielectrics and mos ulsis: principles, technologies and applications
Autor principal: | |
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Lenguaje: | eng |
Publicado: |
Springer
1997
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-3-642-60856-8 http://cds.cern.ch/record/1628391 |
_version_ | 1780933986060599296 |
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author | Hori, Takashi |
author_facet | Hori, Takashi |
author_sort | Hori, Takashi |
collection | CERN |
id | cern-1628391 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1997 |
publisher | Springer |
record_format | invenio |
spelling | cern-16283912021-04-21T21:36:05Zdoi:10.1007/978-3-642-60856-8http://cds.cern.ch/record/1628391engHori, TakashiGate dielectrics and mos ulsis: principles, technologies and applicationsGeneral Theoretical PhysicsSpringeroai:cds.cern.ch:16283911997 |
spellingShingle | General Theoretical Physics Hori, Takashi Gate dielectrics and mos ulsis: principles, technologies and applications |
title | Gate dielectrics and mos ulsis: principles, technologies and applications |
title_full | Gate dielectrics and mos ulsis: principles, technologies and applications |
title_fullStr | Gate dielectrics and mos ulsis: principles, technologies and applications |
title_full_unstemmed | Gate dielectrics and mos ulsis: principles, technologies and applications |
title_short | Gate dielectrics and mos ulsis: principles, technologies and applications |
title_sort | gate dielectrics and mos ulsis: principles, technologies and applications |
topic | General Theoretical Physics |
url | https://dx.doi.org/10.1007/978-3-642-60856-8 http://cds.cern.ch/record/1628391 |
work_keys_str_mv | AT horitakashi gatedielectricsandmosulsisprinciplestechnologiesandapplications |