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Gate dielectrics and mos ulsis: principles, technologies and applications

Detalles Bibliográficos
Autor principal: Hori, Takashi
Lenguaje:eng
Publicado: Springer 1997
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-642-60856-8
http://cds.cern.ch/record/1628391
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author Hori, Takashi
author_facet Hori, Takashi
author_sort Hori, Takashi
collection CERN
id cern-1628391
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1997
publisher Springer
record_format invenio
spelling cern-16283912021-04-21T21:36:05Zdoi:10.1007/978-3-642-60856-8http://cds.cern.ch/record/1628391engHori, TakashiGate dielectrics and mos ulsis: principles, technologies and applicationsGeneral Theoretical PhysicsSpringeroai:cds.cern.ch:16283911997
spellingShingle General Theoretical Physics
Hori, Takashi
Gate dielectrics and mos ulsis: principles, technologies and applications
title Gate dielectrics and mos ulsis: principles, technologies and applications
title_full Gate dielectrics and mos ulsis: principles, technologies and applications
title_fullStr Gate dielectrics and mos ulsis: principles, technologies and applications
title_full_unstemmed Gate dielectrics and mos ulsis: principles, technologies and applications
title_short Gate dielectrics and mos ulsis: principles, technologies and applications
title_sort gate dielectrics and mos ulsis: principles, technologies and applications
topic General Theoretical Physics
url https://dx.doi.org/10.1007/978-3-642-60856-8
http://cds.cern.ch/record/1628391
work_keys_str_mv AT horitakashi gatedielectricsandmosulsisprinciplestechnologiesandapplications