Cargando…

Molecular beam epitaxy of III–V compounds: a comprehensive bibliography 1958–1983

Detalles Bibliográficos
Autores principales:	Ploog, Klaus, Graf, Klaus
Lenguaje:	eng
Publicado:	Springer 1984
Materias:	Chemical Physics and Chemistry
Acceso en línea:	https://dx.doi.org/10.1007/978-3-642-69580-3 http://cds.cern.ch/record/1628429

Ejemplares similares

Indium: discovery, occurence, development, physical and chemical characteristics and bibliography of indium, 1863-1958 inclusive
por: Thompson-Ludwick, Maria
Publicado: (1959)

Gallium, propriétés principales: bibliographie
por: De la Bretèque, Pierre
Publicado: (1962)

epitaxial microstructures
por: Willardson, Robert K, et al.
Publicado: (1994)

A bibliography on heavy mesons and hyperons: (1946-1958)
por: Vitale, Bruno
Publicado: (1960)

Epitaxy: physical principles and technical implementation
por: Herman, Marian A, et al.
Publicado: (2004)

III-V compound semiconductors and semiconductor properties of superionic materials
por: Willardson, RK, et al.
Publicado: (1988)

Reflexiones sobre Oriente Medio, 1958-1983 : extractos del Diario Político
por: Hoxha, Enver, 1908-1985
Publicado: (1984)

Epitaxial Growth of Bi(2)Se(3) Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy
por: Chuai, Ya-Hui, et al.
Publicado: (2022)

Molecular beam epitaxy
por: Pamplin, Brian R
Publicado: (1980)

Molecular beam epitaxy
por: Minchev, G M, et al.
Publicado: (1991)

Atomic and molecular beams: production and collimation
por: Lucas, Cyril Bernard
Publicado: (2013)

Reviews of rare earth: a compilation of books, chapters of books, journal articles, reports, conferences, proceedings and bibliographies published from 1946 to 1968
por: Gschneidner, Karl A, et al.
Publicado: (1991)

Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires
por: Lozano, Miguel Sinusia, et al.
Publicado: (2023)

Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
por: Aseev, Pavel, et al.
Publicado: (2018)

Crystalline molecular complexes and compounds: structures and principles
por: Herbstein, Frank H
Publicado: (2005)

Molecular metal-metal bonds: compounds, synthesis, properties
por: Liddle, Stephen T
Publicado: (2015)

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy
por: Zhang, Jianya, et al.
Publicado: (2021)

Molecules and Models: The molecular structures of main group element compounds
por: Haaland, Arne
Publicado: (2008)

Gas source molecular beam epitaxy: growth and properties of phosphorus containing iii-v heterostructures
por: Panish, Morton B, et al.
Publicado: (1993)

Epitaxial growth of III-nitride compounds: computational approach
por: Matsuoka, Takashi, et al.
Publicado: (2018)

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
por: Pantle, Florian, et al.
Publicado: (2021)

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
por: Volkov, Roman, et al.
Publicado: (2021)

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
por: Park, Jeong-Hwan, et al.
Publicado: (2021)

Minority carriers in III-V semiconductors physics and applications
por: Ahrenkiel, Richard K, et al.
Publicado: (1993)

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
por: Sorokin, Sergey V., et al.
Publicado: (2020)

Proceedings of the NATO Advanced Research Workshop on Molecular Electrochemistry of Inorganic, Bioinorganic and Organometallic Compounds
por: Pombeiro, A, et al.
Publicado: (1993)

Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy
por: Wang, Liming, et al.
Publicado: (2020)

Effective chemical potential for non-equilibrium systems and its application to molecular beam epitaxy of Bi(2)Se(3)
por: Wang, Na, et al.
Publicado: (2018)

Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
por: Pantle, Florian, et al.
Publicado: (2023)

Chemical engineering III
por: Zhang, Jiatao
Publicado: (2014)

Azeotropic data III
por: Horsley, Lee H
Publicado: (1952)

Synthesis and chemistry of agrochemicals III
por: Baker, Don R, et al.
Publicado: (1992)

Nonstoichiometric compounds
por: Ward, Roland
Publicado: (1963)

Molecular beam epitaxy: materials and device applications
por: Asahi, Hajime, et al.
Publicado: (2019)

Molecular beam epitaxy: a short history
por: Orton, J W, et al.
Publicado: (2015)

Effects of shutter transients in molecular beam epitaxy
por: Gozu, Shin-ichiro, et al.
Publicado: (2012)

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
por: Makhloufi, Hajer, et al.
Publicado: (2014)

Comprehensive inorganic chemistry
por: Emeléus, Harry J, et al.
Publicado: (1973)

Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy
por: Minehisa, Keisuke, et al.
Publicado: (2023)

Niobium alloys and compounds
por: Neuberger, M S, et al.
Publicado: (1972)

Cannot write session to /tmp/vufind_sessions/sess_137t9aki7qfvqvml4rqecgomo3