Spin electronics

This report is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magnetoelectronics and devices. The panel's conclusions are based on a literature review and a series of site visits to leading spin electronics research centers in Japan and Western Europe. The panel found that Japan is clearly the world leader in new material synthesis and characterization; it is also a leader in magneto-optical properties of semiconductor devices. Europe is strong in theory pertaining to spin electronics, including injection device structures such as tunneling devices, and band structure predictions of materials properties, and in development of magnetic semiconductors and semiconductor heterostructures. The United States is a leader in optoelectronics including optical detection and injection, as well as novel instrumentation - e.g., ballistic electron magnetic microscopy (BEEM). The United States is also the international leader in applications including read heads, magnetic random access memory (MRAM), sensors, and magnetic device production. Additional details are included in an executive summary conveying the panel's overall conclusions.