Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel det...

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Autores principales: Bomben, Marco, Bagolini, Alvise, Boscardini, Maurizio, Bosisio, Luciano, Calderini, Giovanni, Chauveau, Jaques, Giacomini, Gabriele, La Rosa, Alessandro, Marchori, Giovanni, Zorzi, Nicola
Lenguaje:eng
Publicado: 2013
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/NSSMIC.2013.6829425
http://cds.cern.ch/record/1629401
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author Bomben, Marco
Bagolini, Alvise
Boscardini, Maurizio
Bosisio, Luciano
Calderini, Giovanni
Chauveau, Jaques
Giacomini, Gabriele
La Rosa, Alessandro
Marchori, Giovanni
Zorzi, Nicola
author_facet Bomben, Marco
Bagolini, Alvise
Boscardini, Maurizio
Bosisio, Luciano
Calderini, Giovanni
Chauveau, Jaques
Giacomini, Gabriele
La Rosa, Alessandro
Marchori, Giovanni
Zorzi, Nicola
author_sort Bomben, Marco
collection CERN
description In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.
id cern-1629401
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2013
record_format invenio
spelling cern-16294012023-03-15T19:12:59Zdoi:10.1109/NSSMIC.2013.6829425http://cds.cern.ch/record/1629401engBomben, MarcoBagolini, AlviseBoscardini, MaurizioBosisio, LucianoCalderini, GiovanniChauveau, JaquesGiacomini, GabrieleLa Rosa, AlessandroMarchori, GiovanniZorzi, NicolaPerformance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS UpgradesDetectors and Experimental TechniquesIn view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.arXiv:1311.3780oai:cds.cern.ch:16294012013-11-15
spellingShingle Detectors and Experimental Techniques
Bomben, Marco
Bagolini, Alvise
Boscardini, Maurizio
Bosisio, Luciano
Calderini, Giovanni
Chauveau, Jaques
Giacomini, Gabriele
La Rosa, Alessandro
Marchori, Giovanni
Zorzi, Nicola
Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
title Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
title_full Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
title_fullStr Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
title_full_unstemmed Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
title_short Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
title_sort performance of irradiated thin edgeless n-on-p planar pixel sensors for atlas upgrades
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/NSSMIC.2013.6829425
http://cds.cern.ch/record/1629401
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