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Punktdefekte in Verbindungshalbleitern untersucht mit der gestörten Winkelkorrelation
This work characterizes the doped semiconductors AlN, GaN, their alloys AlGaN and ZnO. They crystallize in the so called wurtzite structure and are used in many devices already (as light emitting diodes or as transparent contacts). For these applications it is important to know how the characteristi...
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| Lenguaje: | ger |
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2013
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| Acceso en línea: | http://cds.cern.ch/record/1634084 |