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Electronic properties of doped semiconductors

Detalles Bibliográficos
Autores principales: Shklovskii, Boris I, Efros, Alex L
Lenguaje:eng
Publicado: Springer 1984
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-662-02403-4
http://cds.cern.ch/record/1634863
_version_ 1780934461612883968
author Shklovskii, Boris I
Efros, Alex L
author_facet Shklovskii, Boris I
Efros, Alex L
author_sort Shklovskii, Boris I
collection CERN
id cern-1634863
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1984
publisher Springer
record_format invenio
spelling cern-16348632021-04-21T21:31:24Zdoi:10.1007/978-3-662-02403-4http://cds.cern.ch/record/1634863engShklovskii, Boris IEfros, Alex LElectronic properties of doped semiconductorsOther Fields of PhysicsSpringeroai:cds.cern.ch:16348631984
spellingShingle Other Fields of Physics
Shklovskii, Boris I
Efros, Alex L
Electronic properties of doped semiconductors
title Electronic properties of doped semiconductors
title_full Electronic properties of doped semiconductors
title_fullStr Electronic properties of doped semiconductors
title_full_unstemmed Electronic properties of doped semiconductors
title_short Electronic properties of doped semiconductors
title_sort electronic properties of doped semiconductors
topic Other Fields of Physics
url https://dx.doi.org/10.1007/978-3-662-02403-4
http://cds.cern.ch/record/1634863
work_keys_str_mv AT shklovskiiborisi electronicpropertiesofdopedsemiconductors
AT efrosalexl electronicpropertiesofdopedsemiconductors