Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...

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Detalles Bibliográficos
Autor principal: Karmakar, Supriya
Lenguaje:eng
Publicado: Springer 2014
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1007/978-81-322-1635-3
http://cds.cern.ch/record/1635137
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author Karmakar, Supriya
author_facet Karmakar, Supriya
author_sort Karmakar, Supriya
collection CERN
description The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
id cern-1635137
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
publisher Springer
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spelling cern-16351372021-04-21T21:30:02Zdoi:10.1007/978-81-322-1635-3http://cds.cern.ch/record/1635137engKarmakar, SupriyaNovel three-state quantum dot gate field effect transistor: fabrication, modeling and applicationsEngineeringThe book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.Springeroai:cds.cern.ch:16351372014
spellingShingle Engineering
Karmakar, Supriya
Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
title Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
title_full Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
title_fullStr Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
title_full_unstemmed Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
title_short Novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
title_sort novel three-state quantum dot gate field effect transistor: fabrication, modeling and applications
topic Engineering
url https://dx.doi.org/10.1007/978-81-322-1635-3
http://cds.cern.ch/record/1635137
work_keys_str_mv AT karmakarsupriya novelthreestatequantumdotgatefieldeffecttransistorfabricationmodelingandapplications

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