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Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming

Detalles Bibliográficos
Autor principal: Cole, E A B
Lenguaje:eng
Publicado: Springer 2009
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-1-84882-937-4
http://cds.cern.ch/record/1639501
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author Cole, E A B
author_facet Cole, E A B
author_sort Cole, E A B
collection CERN
id cern-1639501
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher Springer
record_format invenio
spelling cern-16395012021-04-21T21:24:21Zdoi:10.1007/978-1-84882-937-4http://cds.cern.ch/record/1639501engCole, E A BMathematical and numerical modelling of heterostructure semiconductor devices from theory to programmingMathematical Physics and MathematicsSpringeroai:cds.cern.ch:16395012009
spellingShingle Mathematical Physics and Mathematics
Cole, E A B
Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
title Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
title_full Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
title_fullStr Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
title_full_unstemmed Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
title_short Mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
title_sort mathematical and numerical modelling of heterostructure semiconductor devices from theory to programming
topic Mathematical Physics and Mathematics
url https://dx.doi.org/10.1007/978-1-84882-937-4
http://cds.cern.ch/record/1639501
work_keys_str_mv AT coleeab mathematicalandnumericalmodellingofheterostructuresemiconductordevicesfromtheorytoprogramming