Cargando…

Minority anion substitution by Ni in ZnO

We report on the lattice location of implanted Ni in ZnO using the $\beta$− emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the obser...

Descripción completa

Detalles Bibliográficos
Autores principales:	Pereira, Lino Miguel da Costa, Wahl, Ulrich, Correia, João Guilherme, Amorim, Lígia Marina, Silva, Daniel José, David-Bosne, Eric, Decoster, Stefan, da Silva, Manuel Ribeiro, Temst, Kristiaan, Vantomme, André
Lenguaje:	eng
Publicado:	2013
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1063/1.4820254 http://cds.cern.ch/record/1640991

Ejemplares similares

Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution
por: Da Costa Pereira, Lino Miguel, et al.
Publicado: (2014)

Precise lattice location of substitutional and interstitial Mg in AlN
por: Amorim, Lígia Marina, et al.
Publicado: (2013)

Mixed Zn and O substitution of Co and Mn in ZnO
por: Pereira, Lino Miguel da Costa, et al.
Publicado: (2011)

Paramagnetism and antiferromagnetic interactions in single-phase Fe-implanted ZnO
por: Pereira, Lino Miguel da Costa, et al.
Publicado: (2013)

Lattice sites of Na dopants in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2016)

Lattice location of Mg in GaN: a fresh look at doping limitations
por: Wahl, Ulrich, et al.
Publicado: (2017)

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types
por: Pereira, LMC, et al.
Publicado: (2011)

Evidence of N substitution by Mn in GaN
por: Pereira, LMC, et al.
Publicado: (2013)

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE facility
por: Wahl, Ulrich, et al.
Publicado: (2014)

Arsenic in ZnO and GaN: substitutional cation or anion sites?
por: Wahl, Ulrich, et al.
Publicado: (2007)

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
por: Silva, Daniel José, et al.
Publicado: (2013)

Lattice location of the group V elements Sb, As, and P in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2010)

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
por: Pereira, LMC, et al.
Publicado: (2011)

A versatile apparatus for on-line emission channeling experiments
por: da Silva, Manuel Ribeiro, et al.
Publicado: (2013)

Lattice location of implanted transition metals in 3C–SiC
por: Granadeiro Costa, Angelo Rafael, et al.
Publicado: (2017)

Diluted manganese on the bond-centered site in germanium
por: Decoster, S, et al.
Publicado: (2010)

Direct observation of the lattice sites of implanted manganese in silicon
por: da Silva, Daniel José, et al.
Publicado: (2015)

Lattice position and thermal stability of diluted As in Ge
por: Decoster, S, et al.
Publicado: (2012)

Lattice location study of ion implanted Sn and Sn-related defects in Ge
por: Decoster, S, et al.
Publicado: (2010)

Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge
por: Decoster, S, et al.
Publicado: (2008)

Lattice location study of implanted In in Ge
por: Decoster, S, et al.
Publicado: (2009)

Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As
por: De Lemos Lima, Tiago Abel, et al.
Publicado: (2015)

Direct evidence for implanted Fe on substitutional Ga sites in GaN
por: Wahl, U, et al.
Publicado: (2003)

Transition metal impurities on the bond-centered site in Ge
por: Decoster, S, et al.
Publicado: (2009)

Origin of the lattice sites occupied by implanted Co in Si
por: Silva, Daniel, et al.
Publicado: (2014)

Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments
por: Silva, Daniel, et al.
Publicado: (2015)

Lattice location of implanted Ag in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted As in ZnO
por: Wahl, U, et al.
Publicado: (2007)

Lattice location and stability of implanted Cu in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2004)

Lattice location of implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

The influence of oxygen on the lattice sites of rare earths in silicon
por: Wahl, U, et al.
Publicado: (2003)

Lattice sites and stability of implanted Er in FZ and CZ Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location and stability of ion implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Implantation site of rare earths in single-crystalline ZnO
por: Wahl, U, et al.
Publicado: (2003)

Lattice location and thermal stability of implanted Fe in ZnO
por: Rita, E, et al.
Publicado: (2004)

Lattice sites of implanted Cu and Ag in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2005)

Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
por: De Vries, B, et al.
Publicado: (2003)

Emission channeling experiments from the decay of $^{149}$Gd to $^{149}$Eu in GaN
por: De Vries, B, et al.
Publicado: (2003)

Lattice site and stability of implanted Ag in ZnO
por: Rita, E, et al.
Publicado: (2003)

Direct evidence for As as a Zn-site impurity in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2005)

Cannot write session to /tmp/vufind_sessions/sess_a3bc38nordnkrl3hhej2a0la7m