Cargando…
Ion implantation of Cd and Ag into AlN and GaN
GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the c...
| Autores principales: | , , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2012
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1002/pssc.201100203 http://cds.cern.ch/record/1641252 |