Cargando…

Feature profile evolution in plasma processing using on-wafer monitoring system

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of re...

Descripción completa

Detalles Bibliográficos
Autor principal: Samukawa, Seiji
Lenguaje:eng
Publicado: Springer 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-4-431-54795-2
http://cds.cern.ch/record/1646858
_version_ 1780935117597835264
author Samukawa, Seiji
author_facet Samukawa, Seiji
author_sort Samukawa, Seiji
collection CERN
description This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.
id cern-1646858
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
publisher Springer
record_format invenio
spelling cern-16468582021-04-21T21:20:46Zdoi:10.1007/978-4-431-54795-2http://cds.cern.ch/record/1646858engSamukawa, SeijiFeature profile evolution in plasma processing using on-wafer monitoring systemEngineeringThis book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.Springeroai:cds.cern.ch:16468582014
spellingShingle Engineering
Samukawa, Seiji
Feature profile evolution in plasma processing using on-wafer monitoring system
title Feature profile evolution in plasma processing using on-wafer monitoring system
title_full Feature profile evolution in plasma processing using on-wafer monitoring system
title_fullStr Feature profile evolution in plasma processing using on-wafer monitoring system
title_full_unstemmed Feature profile evolution in plasma processing using on-wafer monitoring system
title_short Feature profile evolution in plasma processing using on-wafer monitoring system
title_sort feature profile evolution in plasma processing using on-wafer monitoring system
topic Engineering
url https://dx.doi.org/10.1007/978-4-431-54795-2
http://cds.cern.ch/record/1646858
work_keys_str_mv AT samukawaseiji featureprofileevolutioninplasmaprocessingusingonwafermonitoringsystem