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Radiation environment and cooling of the Si option for the IT upgrade

The expected radiation dose for the Si option of the IT upgrade is evaluated based on the experience of run-1. The sensors have to be kept ∼ 20◦C below ambient temperature to avoid thermal runaway. A mock-up has been constructed to test the cooling of the sensors and their electronics with dry cold...

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Detalles Bibliográficos
Autores principales: Belogurov, S, Collins, P, Dijkstra, H, Van Herwijnen, E, Semennikov, A, Souza de Paula, B
Lenguaje:eng
Publicado: 2014
Materias:
Acceso en línea:http://cds.cern.ch/record/1647824
Descripción
Sumario:The expected radiation dose for the Si option of the IT upgrade is evaluated based on the experience of run-1. The sensors have to be kept ∼ 20◦C below ambient temperature to avoid thermal runaway. A mock-up has been constructed to test the cooling of the sensors and their electronics with dry cold air. The tests show that the temperatures of the hybrids and sensors can be stabilized and tuned to the required level.