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Nonradiative recombination in semiconductors

In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The author...

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Detalles Bibliográficos
Autores principales: Abakumov, VN, Perel, VI, Yassievich, IN
Lenguaje:eng
Publicado: Elsevier Science 1991
Materias:
Acceso en línea:http://cds.cern.ch/record/1663292
Descripción
Sumario:In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu