Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC...

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Autores principales: Bubna, M., Bortoletto, D., Alagoz, E., Krzywda, A., Arndt, K., Shipsey, I., Bolla, G., Hinton, N., Kok, A., Hansen, T.-E., Summanwar, A., Brom, J.M., Boscardin, M., Chramowicz, J., Cumalat, J., Dalla Betta, G.F., Dinardo, M., Godshalk, A., Jones, M., Krohn, M.D., Kumar, A., Lei, C.M., Mendicino, R., Moroni, L., Perera, L., Povoli, M., Prosser, A., Rivera, R., Solano, A., Obertino, M.M., Kwan, S., Uplegger, L., Vigani, L., Wagner, S.
Lenguaje:eng
Publicado: 2014
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/9/07/C07019
http://cds.cern.ch/record/1664657
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author Bubna, M.
Bortoletto, D.
Alagoz, E.
Krzywda, A.
Arndt, K.
Shipsey, I.
Bolla, G.
Hinton, N.
Kok, A.
Hansen, T.-E.
Summanwar, A.
Brom, J.M.
Boscardin, M.
Chramowicz, J.
Cumalat, J.
Dalla Betta, G.F.
Dinardo, M.
Godshalk, A.
Jones, M.
Krohn, M.D.
Kumar, A.
Lei, C.M.
Mendicino, R.
Moroni, L.
Perera, L.
Povoli, M.
Prosser, A.
Rivera, R.
Solano, A.
Obertino, M.M.
Kwan, S.
Uplegger, L.
Vigani, L.
Wagner, S.
author_facet Bubna, M.
Bortoletto, D.
Alagoz, E.
Krzywda, A.
Arndt, K.
Shipsey, I.
Bolla, G.
Hinton, N.
Kok, A.
Hansen, T.-E.
Summanwar, A.
Brom, J.M.
Boscardin, M.
Chramowicz, J.
Cumalat, J.
Dalla Betta, G.F.
Dinardo, M.
Godshalk, A.
Jones, M.
Krohn, M.D.
Kumar, A.
Lei, C.M.
Mendicino, R.
Moroni, L.
Perera, L.
Povoli, M.
Prosser, A.
Rivera, R.
Solano, A.
Obertino, M.M.
Kwan, S.
Uplegger, L.
Vigani, L.
Wagner, S.
author_sort Bubna, M.
collection CERN
description The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.
id cern-1664657
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
record_format invenio
spelling cern-16646572022-02-23T03:10:08Zdoi:10.1088/1748-0221/9/07/C07019http://cds.cern.ch/record/1664657engBubna, M.Bortoletto, D.Alagoz, E.Krzywda, A.Arndt, K.Shipsey, I.Bolla, G.Hinton, N.Kok, A.Hansen, T.-E.Summanwar, A.Brom, J.M.Boscardin, M.Chramowicz, J.Cumalat, J.Dalla Betta, G.F.Dinardo, M.Godshalk, A.Jones, M.Krohn, M.D.Kumar, A.Lei, C.M.Mendicino, R.Moroni, L.Perera, L.Povoli, M.Prosser, A.Rivera, R.Solano, A.Obertino, M.M.Kwan, S.Uplegger, L.Vigani, L.Wagner, S.Testbeam and Laboratory Characterization of CMS 3D Pixel SensorsDetectors and Experimental TechniquesThe pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.arXiv:1402.6384oai:cds.cern.ch:16646572014-02-25
spellingShingle Detectors and Experimental Techniques
Bubna, M.
Bortoletto, D.
Alagoz, E.
Krzywda, A.
Arndt, K.
Shipsey, I.
Bolla, G.
Hinton, N.
Kok, A.
Hansen, T.-E.
Summanwar, A.
Brom, J.M.
Boscardin, M.
Chramowicz, J.
Cumalat, J.
Dalla Betta, G.F.
Dinardo, M.
Godshalk, A.
Jones, M.
Krohn, M.D.
Kumar, A.
Lei, C.M.
Mendicino, R.
Moroni, L.
Perera, L.
Povoli, M.
Prosser, A.
Rivera, R.
Solano, A.
Obertino, M.M.
Kwan, S.
Uplegger, L.
Vigani, L.
Wagner, S.
Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
title Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
title_full Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
title_fullStr Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
title_full_unstemmed Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
title_short Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
title_sort testbeam and laboratory characterization of cms 3d pixel sensors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/9/07/C07019
http://cds.cern.ch/record/1664657
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