3D silicon sensors: irradiation results

Owing to their unique architecture, that allows the inter-electrode distance to be decoupled from the substrate thickness, 3D silicon sensors are intrinsically radiation hard devices. As such, they are suited to the demanding specifications of experiments at the High Luminosity LHC. The ATLAS Insertable B-Layer (IBL) project has represented a first important benchmark for 3D sensor technology. Owing to a joint effort of research institutes and processing facilities within the ATLAS 3D Sensor Collaboration, 3D pixel sensors compatible with the FE-I4 read-out chip and meeting the IBL specifications have been successfully produced. Selected results from the laboratory characterization and beam tests of irradiated 3D sensor assemblies during the IBL qualification campaign are reported and discussed in this paper.