Beam incidents - High particle rate tests of an LHCb/Velo silicon strip module

A silicon micro-strip detector module from the LHCb/Velo detector was exposed to proton rates in the range of $2\times 10^9$ to $9\times 10^{12}$ protons per pulse. The beam energy was $1.4~\rm{GeV}$ and the pulse length was 200 ns, concentrated on a surface area of approximately $0.5~{\rm cm^2}$. The sensor is of $n$-in-$n$ type and AC-coupled to a front-end chip in $0.25~\rm{\mu m}$ CMOS technology. Both the active sensor area and the readout chips were exposed to successive beam pulses, at perpendicular impact. The module was powered with both low and high voltage, and read out during and between beam exposures. We report on the measurements of the backplane bias voltage collapse, of the leakage current, as well as noise and pedestal variations of the front-end readout. No degradation or damage was observed beyond those normally expected from the accumulated radiation dose.