Radiation effects and soft errors in integrated circuits and electronic devices

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative en...

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Detalles Bibliográficos
Autores principales: Schrimpf, R D, Fleetwood, D M
Lenguaje:eng
Publicado: World Scientific 2004
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/1701628
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author Schrimpf, R D
Fleetwood, D M
author_facet Schrimpf, R D
Fleetwood, D M
author_sort Schrimpf, R D
collection CERN
description This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th
id cern-1701628
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
publisher World Scientific
record_format invenio
spelling cern-17016282021-04-21T21:02:10Zhttp://cds.cern.ch/record/1701628engSchrimpf, R DFleetwood, D MRadiation effects and soft errors in integrated circuits and electronic devicesEngineeringThis book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes thWorld Scientificoai:cds.cern.ch:17016282004
spellingShingle Engineering
Schrimpf, R D
Fleetwood, D M
Radiation effects and soft errors in integrated circuits and electronic devices
title Radiation effects and soft errors in integrated circuits and electronic devices
title_full Radiation effects and soft errors in integrated circuits and electronic devices
title_fullStr Radiation effects and soft errors in integrated circuits and electronic devices
title_full_unstemmed Radiation effects and soft errors in integrated circuits and electronic devices
title_short Radiation effects and soft errors in integrated circuits and electronic devices
title_sort radiation effects and soft errors in integrated circuits and electronic devices
topic Engineering
url http://cds.cern.ch/record/1701628
work_keys_str_mv AT schrimpfrd radiationeffectsandsofterrorsinintegratedcircuitsandelectronicdevices
AT fleetwooddm radiationeffectsandsofterrorsinintegratedcircuitsandelectronicdevices

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