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The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport...

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Detalles Bibliográficos
Autores principales: Lipperheide, Reinhard, Wille, Uwe
Lenguaje:eng
Publicado: Springer 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-319-05924-2
http://cds.cern.ch/record/1707556
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author Lipperheide, Reinhard
Wille, Uwe
author_facet Lipperheide, Reinhard
Wille, Uwe
author_sort Lipperheide, Reinhard
collection CERN
description The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail, and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
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spelling cern-17075562021-04-21T20:58:28Zdoi:10.1007/978-3-319-05924-2http://cds.cern.ch/record/1707556engLipperheide, ReinhardWille, UweThe thermoballistic transport model: a novel approach to charge carrier transport in semiconductorsOther Fields of PhysicsThe book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail, and specific examples of interest to current research in semiconductor physics and spintronics are worked out.Springeroai:cds.cern.ch:17075562014
spellingShingle Other Fields of Physics
Lipperheide, Reinhard
Wille, Uwe
The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
title The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
title_full The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
title_fullStr The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
title_full_unstemmed The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
title_short The thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
title_sort thermoballistic transport model: a novel approach to charge carrier transport in semiconductors
topic Other Fields of Physics
url https://dx.doi.org/10.1007/978-3-319-05924-2
http://cds.cern.ch/record/1707556
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