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Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
We present a study of the gain dependence on temperature in several different silicon photomultipliers. This work was motivated by the goal to determine design options for an power supply regulator that has the capability to adjust the bias voltage with changing temperature to keep the gain constant...
| Autores principales: | , , , , , |
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1709220 |
| Sumario: | We present a study of the gain dependence on temperature in several different
silicon photomultipliers. This work was motivated by the goal to determine design
options for an power supply regulator that has the capability to adjust the bias voltage
with changing temperature to keep the gain constant. In this note, we report
on results of silicon photomultipliers produced by CPTA, Hamamatsu and KETEK.
Finally we also present first results with a gain-stabilizing electronics board. |
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