Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers

We present a study of the gain dependence on temperature in several different silicon photomultipliers. This work was motivated by the goal to determine design options for an power supply regulator that has the capability to adjust the bias voltage with changing temperature to keep the gain constant...

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Detalles Bibliográficos
Autores principales: Cvach, J, Eigen, G, Kvasnicka, J, Polak, I, Van der Kraaij, E, Zalieckas, J
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: 2014
Materias:
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.5:Highly Granular Calorimetry
Acceso en línea:http://cds.cern.ch/record/1709220
_version_ 1780936629922299904
author Cvach, J
Eigen, G
Kvasnicka, J
Polak, I
Van der Kraaij, E
Zalieckas, J
author_facet Cvach, J
Eigen, G
Kvasnicka, J
Polak, I
Van der Kraaij, E
Zalieckas, J
author_sort Cvach, J
collection CERN
description We present a study of the gain dependence on temperature in several different silicon photomultipliers. This work was motivated by the goal to determine design options for an power supply regulator that has the capability to adjust the bias voltage with changing temperature to keep the gain constant. In this note, we report on results of silicon photomultipliers produced by CPTA, Hamamatsu and KETEK. Finally we also present first results with a gain-stabilizing electronics board.
format info:eu-repo/semantics/article
id cern-1709220
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
record_format invenio
spelling cern-17092202019-09-30T06:29:59Z http://cds.cern.ch/record/1709220 eng Cvach, J Eigen, G Kvasnicka, J Polak, I Van der Kraaij, E Zalieckas, J Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers Detectors and Experimental Techniques 9: Advanced infrastructures for detector R&D 9.5:Highly Granular Calorimetry We present a study of the gain dependence on temperature in several different silicon photomultipliers. This work was motivated by the goal to determine design options for an power supply regulator that has the capability to adjust the bias voltage with changing temperature to keep the gain constant. In this note, we report on results of silicon photomultipliers produced by CPTA, Hamamatsu and KETEK. Finally we also present first results with a gain-stabilizing electronics board. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1709220 2014
spellingShingle Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.5:Highly Granular Calorimetry
Cvach, J
Eigen, G
Kvasnicka, J
Polak, I
Van der Kraaij, E
Zalieckas, J
Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
title Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
title_full Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
title_fullStr Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
title_full_unstemmed Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
title_short Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers
title_sort characterization of the gain dependence on temperature in silicon photomultipliers
topic Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.5:Highly Granular Calorimetry
url http://cds.cern.ch/record/1709220
http://cds.cern.ch/record/1709220
work_keys_str_mv AT cvachj characterizationofthegaindependenceontemperatureinsiliconphotomultipliers
AT eigeng characterizationofthegaindependenceontemperatureinsiliconphotomultipliers
AT kvasnickaj characterizationofthegaindependenceontemperatureinsiliconphotomultipliers
AT polaki characterizationofthegaindependenceontemperatureinsiliconphotomultipliers
AT vanderkraaije characterizationofthegaindependenceontemperatureinsiliconphotomultipliers
AT zalieckasj characterizationofthegaindependenceontemperatureinsiliconphotomultipliers

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