Radiation tolerance of a moderate resistivity substrate in a modern CMOS process

The LePix project aims at developing monolithic pixel detectors in a 90nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advance...

Descripción completa

Detalles Bibliográficos
Autores principales: Potenza, A, Bisello, D, Caselle, M, Costa, M, Demaria, N, Giubilato, P, Ikemoto, Y, Mansuy, C, Marchioro, A, Mattiazzo, S, Moll, M, Pacher, L, Pacifico, N, Pantano, D, Rivetti, A, Silvestrin, L, Snoeys, W
Publicado: 2013
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2012.10.020
http://cds.cern.ch/record/1709906
Descripción
Sumario:The LePix project aims at developing monolithic pixel detectors in a 90nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advanced CMOS process, has been investigated. Diodes of about 1mm^2 and pixel matrices were irradiated with neutrons at fluences from 10^1^2n/cm^2 to 2x10^1^5n/cm^2 and characterized using CV and IV measurements. Matrices have also been irradiated with Xrays and withstand at least 10Mrad.

Ejemplares similares