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CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results
The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Omega cm, which is at least one order of magnitude g...
| Autores principales: | , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2013.06.068 http://cds.cern.ch/record/1711839 |
| _version_ | 1780936753580867584 |
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| author | Rivetti, A Caselle, M Wyss, J Bisello, D Costa, M Kloukinas, K Demaria, N Pantano, D Rousset, J Battaglia, M Mansuy, C Potenza, A Ikemoto, Y Giubilato, P Chalmet, P Mugnier, H Silvestrin, L Marchioro, A |
| author_facet | Rivetti, A Caselle, M Wyss, J Bisello, D Costa, M Kloukinas, K Demaria, N Pantano, D Rousset, J Battaglia, M Mansuy, C Potenza, A Ikemoto, Y Giubilato, P Chalmet, P Mugnier, H Silvestrin, L Marchioro, A |
| author_sort | Rivetti, A |
| collection | CERN |
| description | The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Omega cm, which is at least one order of magnitude greater than the typical value (1-10 Omega cm) adopted for integrated circuit production. The possibility of employing these lightly doped substrates was offered by one foundry for an otherwise standard 90 nm CMOS process. In the paper, the case for such a development is first discussed. The sensor design is then described, along with the key challenges encountered in fabricating the detecting element in a very deep submicron process. Finally, irradiation results obtained on test matrices are reported. (C) 2013 Elsevier B.V. All rights reserved |
| id | cern-1711839 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2013 |
| record_format | invenio |
| spelling | cern-17118392019-09-30T06:29:59Zdoi:10.1016/j.nima.2013.06.068http://cds.cern.ch/record/1711839engRivetti, ACaselle, MWyss, JBisello, DCosta, MKloukinas, KDemaria, NPantano, DRousset, JBattaglia, MMansuy, CPotenza, AIkemoto, YGiubilato, PChalmet, PMugnier, HSilvestrin, LMarchioro, ACMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation resultsDetectors and Experimental TechniquesNuclear Physics - ExperimentParticle Physics - TheoryThe LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Omega cm, which is at least one order of magnitude greater than the typical value (1-10 Omega cm) adopted for integrated circuit production. The possibility of employing these lightly doped substrates was offered by one foundry for an otherwise standard 90 nm CMOS process. In the paper, the case for such a development is first discussed. The sensor design is then described, along with the key challenges encountered in fabricating the detecting element in a very deep submicron process. Finally, irradiation results obtained on test matrices are reported. (C) 2013 Elsevier B.V. All rights reservedoai:cds.cern.ch:17118392013 |
| spellingShingle | Detectors and Experimental Techniques Nuclear Physics - Experiment Particle Physics - Theory Rivetti, A Caselle, M Wyss, J Bisello, D Costa, M Kloukinas, K Demaria, N Pantano, D Rousset, J Battaglia, M Mansuy, C Potenza, A Ikemoto, Y Giubilato, P Chalmet, P Mugnier, H Silvestrin, L Marchioro, A CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results |
| title | CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results |
| title_full | CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results |
| title_fullStr | CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results |
| title_full_unstemmed | CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results |
| title_short | CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results |
| title_sort | cmos sensors in 90 nm fabricated on high resistivity wafers: design concept and irradiation results |
| topic | Detectors and Experimental Techniques Nuclear Physics - Experiment Particle Physics - Theory |
| url | https://dx.doi.org/10.1016/j.nima.2013.06.068 http://cds.cern.ch/record/1711839 |
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