Cargando…
CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results
The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Omega cm, which is at least one order of magnitude g...
Autores principales: | Rivetti, A, Caselle, M, Wyss, J, Bisello, D, Costa, M, Kloukinas, K, Demaria, N, Pantano, D, Rousset, J, Battaglia, M, Mansuy, C, Potenza, A, Ikemoto, Y, Giubilato, P, Chalmet, P, Mugnier, H, Silvestrin, L, Marchioro, A |
---|---|
Lenguaje: | eng |
Publicado: |
2013
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2013.06.068 http://cds.cern.ch/record/1711839 |
Ejemplares similares
-
Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture
por: Giubilato, P, et al.
Publicado: (2013) -
LePIX: First results from a novel monolithic pixel sensor
por: Mattiazzo, S, et al.
Publicado: (2013) -
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process
por: Potenza, A, et al.
Publicado: (2013) -
LePix-A high resistivity, fully depleted monolithic pixel detector
por: Giubilato, P, et al.
Publicado: (2013) -
Characterization of a commercial 65 nm CMOS technology for SLHC applications
por: Bonacini, S, et al.
Publicado: (2012)