Cargando…

Diffusion of tellurium in silicon

Detalles Bibliográficos
Autores principales:	Stolwijk, N A, Rollert, F, Grünebaum, D, Mehrer, H, Weyer, G
Lenguaje:	eng
Publicado:	1986
Materias:	Other Fields of Physics
Acceso en línea:	http://cds.cern.ch/record/171433

Ejemplares similares

Diffusion of tellurium in silicon studied by the redistribution of an implanted source of radioactive 121Te.Si: Te
por: Rollert, R, et al.
Publicado: (1993)

Implantation and diffusion of $^{73}$As in GaAs and GaP
por: Bösker, G, et al.
Publicado: (2000)

Lattice and grain-boundary diffusion of $^{121}$Te in silver after radioisotope implantation at the ISOLDE
por: Geise, J, et al.
Publicado: (1986)

Diffusion of implanted Te and Se in noble metals
por: Rummel, G, et al.
Publicado: (1988)

Diffusion of ion implanted Sn and Sb in heavily doped silicon
por: Andersen, P E, et al.
Publicado: (1988)

Implantation of Radioisotopes at ISOLDE: a Novel Technique for Diffusion Studies in Solids : Festschrift Seeger (Alfred) on his 60th birthday
por: Mehrer, H
Publicado: (1987)

Diffusion of $^{185}$Au in amorphous W - N diffusion barriers
por: Dörner, W, et al.
Publicado: (1991)

Tracer diffusion and thermal stability in amorphous Co-Zr and their relevance for solid state amorphization
por: Dörner, W, et al.
Publicado: (1991)

Defect-impurity formation at high donor concentrations in silicon
por: Nylandsted-Larsen, A, et al.
Publicado: (1992)

The tin-vacancy pair defect in silicon
por: Damgaard, S, et al.
Publicado: (1981)

The nature of electrically inactive antimony in silicon
por: Nylandsted-Larsen, A, et al.
Publicado: (1986)

Annealing behaviour of high concentration of implanted Sb and Sn in silicon
por: Weyer, G, et al.
Publicado: (1986)

Diffusivity in silicon 1953 to 2009
por: Fisher, David J
Publicado: (2010)

Direct evidence for substitutional ion-implanted indium dopants in silicon
por: Lindner, G, et al.
Publicado: (1986)

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon
por: Weyer, G, et al.
Publicado: (1982)

Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Diffusion of implanted radioisotopes in solids
por: Mehrer, H, et al.
Publicado: (1987)

Diffusion of implanted radioisotopes in solids
por: Mehrer, H, et al.
Publicado: (1987)

Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements
por: Nylandsted-Larsen, A, et al.
Publicado: (1985)

Diffusion in semiconductors, other than silicon: compilation
por: Fisher, David J
Publicado: (2011)

The effect of heavy doping on complex formation and diffusivity of Sb in Si
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

Diffusion in intrinsic and highly doped III-V semiconductors
por: Bösker, G, et al.
Publicado: (1997)

Defect structures in ion-implanted InSb
por: Weyer, G, et al.
Publicado: (1986)

Weird muonium diffusion in solid xenon
por: Storchak, S N, et al.
Publicado: (1992)

Diffusion of groups IV and V impurities in silicon at high donor concentrations: a comparison between experimental and theoretical results
por: Kyllesbech-Larsen, K, et al.
Publicado: (1990)

Mössbauer spectroscopy of defects in ferromagnetic materials
por: Weyer, G
Publicado: (1986)

Magnetic hyperfine fields of 5sp impurities in vacancy complexes in ferromagnetic metals
por: Weyer, G
Publicado: (1989)

A novel type of Auger electron Mössbauer spectroscopy
por: Weyer, G
Publicado: (1990)

Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
por: Weyer, G
Publicado: (1988)

Mössbauer studies of defects in ion implanted metals and semiconductors
por: Weyer, G
Publicado: (1988)

Defect recovery of ion implanted InP
por: Weyer, G
Publicado: (1994)

Quantum diffusion of muonium in solid nitrogen
por: Storchak, S N, et al.
Publicado: (1992)

The Electronic Configuration of $^{121}Sb$ in Semiconductors
por: Weyer, G, et al.
Publicado: (1985)

On the formation of highly symmetric impurity-vacancy clusters in ion-implanted f.c.c. metals
por: Lindner, G, et al.
Publicado: (1987)

Mössbauer study of defects created by low-fluence In.suP(+) implantations in InP
por: Kringhøj, P, et al.
Publicado: (1993)

Oxygen in silicon
por: Willardson, Robert K, et al.
Publicado: (1994)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping defect cascades
por: Andreasen, H, et al.
Publicado: (1992)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping damage cascade
por: Andreasen, H, et al.
Publicado: (1990)

Radiogenic Sn impurity defects in germanium
por: Damgaard, S, et al.
Publicado: (1981)

Indium-defects complexes in silicon studied by perturbed angular correlation spectroscopy
por: Wichert, T, et al.
Publicado: (1989)

Cannot write session to /tmp/vufind_sessions/sess_rghliu89loo3r28prcv2kq7rfh