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Direct evidence for substitutional ion-implanted indium dopants in silicon
Autores principales: | , , , , , , |
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Lenguaje: | eng |
Publicado: |
1986
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1103/PhysRevLett.57.2283 http://cds.cern.ch/record/173313 |
_version_ | 1780881177120342016 |
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author | Lindner, G Hofsäss, H C Winter, S Besold, B Recknagel, E Weyer, G Petersen, J W |
author_facet | Lindner, G Hofsäss, H C Winter, S Besold, B Recknagel, E Weyer, G Petersen, J W |
author_sort | Lindner, G |
collection | CERN |
id | cern-173313 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1986 |
record_format | invenio |
spelling | cern-1733132019-09-30T06:29:59Zdoi:10.1103/PhysRevLett.57.2283http://cds.cern.ch/record/173313engLindner, GHofsäss, H CWinter, SBesold, BRecknagel, EWeyer, GPetersen, J WDirect evidence for substitutional ion-implanted indium dopants in siliconOther Fields of PhysicsCERN-EP-86-190oai:cds.cern.ch:1733131986-11-18 |
spellingShingle | Other Fields of Physics Lindner, G Hofsäss, H C Winter, S Besold, B Recknagel, E Weyer, G Petersen, J W Direct evidence for substitutional ion-implanted indium dopants in silicon |
title | Direct evidence for substitutional ion-implanted indium dopants in silicon |
title_full | Direct evidence for substitutional ion-implanted indium dopants in silicon |
title_fullStr | Direct evidence for substitutional ion-implanted indium dopants in silicon |
title_full_unstemmed | Direct evidence for substitutional ion-implanted indium dopants in silicon |
title_short | Direct evidence for substitutional ion-implanted indium dopants in silicon |
title_sort | direct evidence for substitutional ion-implanted indium dopants in silicon |
topic | Other Fields of Physics |
url | https://dx.doi.org/10.1103/PhysRevLett.57.2283 http://cds.cern.ch/record/173313 |
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