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Direct evidence for substitutional ion-implanted indium dopants in silicon

Detalles Bibliográficos
Autores principales:	Lindner, G, Hofsäss, H C, Winter, S, Besold, B, Recknagel, E, Weyer, G, Petersen, J W
Lenguaje:	eng
Publicado:	1986
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1103/PhysRevLett.57.2283 http://cds.cern.ch/record/173313

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