Cargando…
Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons
Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collis...
Autor principal: | Holmkvist, William |
---|---|
Lenguaje: | eng |
Publicado: |
2014
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1752510 |
Ejemplares similares
-
CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes
por: Hoedlmoser, H, et al.
Publicado: (2007) -
Iridium-related deep levels in n-type silicon
por: Bollmann, J, et al.
Publicado: (2000) -
Defect generation by radioactive decay of light elements in n-type silicon
por: Bollmann, J, et al.
Publicado: (2006) -
Measurement of average electron densities in Si and Ge using MeV delta -rays produced by channelled high-energy projectiles
por: Bak, J F, et al.
Publicado: (1982) -
Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment
por: Ruggiero, G
Publicado: (2003)