Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements

The performance of silicon diodes in high energy physics experiments deteriorates with irradiation. Performance properties of proton and pion irradiated samples are studied with CV/IV and TCT measurements. CV/IV measurements offer the possibility to study the full depletion voltage, leakage current and effective doping concentration. TCT measurements are used to investigate the electric field, charge collection and type inversion in function of the fluence. An annealing study is performed with one 9.64E13 p/cm2 irradiated sample up to a total annealing time of 1167 min at 60C.